ITRI Partners with TSMC and NYCU in Advancing Magnetic Memory Technology
The use of lower voltage and current in the memory can lead to higher efficiency, according to Dr. Shih-Chieh Chang, General Director of ITRI’s Electronic and Optoelectronic System Research Laboratories. Therefore, ITRI and TSMC developed SOT-MRAM technology that incorporates high write efficiency and low write voltage, achieving a writing speed of 0.4 nanoseconds and a high endurance of 7 trillion reads and writes. The memory also offers a data storage lifespan of over 10 years. In the future, it can potentially be integrated into the advanced processes of embedded memory, which has outstanding prospects in applications such as AI, automotive electronics, and high-performance computing chips.
ITRI is collaborating with TSMC and National Yang Ming Chiao Tung University on the development of magnetic memory technology.
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